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Standard Power MOSFET
IRFP 264
V DSS = 250 V
I D (cont) = 38 A
R DS(on) = 0.075 ?
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
250
250
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
D (TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
38
150
A
A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
I AR
38
A
E AR
dv/dt
P D
T J
T JM
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
28
5
280
-55 ... +150
150
mJ
V/ns
W
° C
° C
T stg
-55 ... +150
° C
Features
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
6 g
International standard package
JEDEC TO-247 AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
power supplies
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
250
2
4
± 100
25
250
V
V
nA
μ A
μ A
Motor controld
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw
R DS(on)
V GS = 10 V, I D = 23 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.075
?
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
96668(1/96)
1-2
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